K15H50C

TK15H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK15H50C ○ Switching Regulator Applications Low drain−source ON resistance Low leakage current Enhancement mode : RDS (ON) = 0. 33 Ω (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, I45D = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 15 60 150 765 15 15 150 −55~150 Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) 1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE JEDEC JEITA TOSHIBA Weight: 3.8 g (typ.) ― ― Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) www.DataSheet4U.com Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. ...