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BAT54A-G Dataheets PDF



Part Number BAT54A-G
Manufacturers Comchip Technology
Logo Comchip Technology
Description Surface Mount Schottky Diode
Datasheet BAT54A-G DatasheetBAT54A-G Datasheet (PDF)

Surface Mount Schottky Diode COMCHIP www.comchip.com.tw BAT54 Series -G Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Voltage: 3 0 Volts Current: 2 00 mA SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Mechanical data Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.008 grams (approx.) Mounting Position: Any Top View .056 (1.40) .047 (1.20) 3 BAT54-G 3 CATHODE BAT54A-G CATH.

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Surface Mount Schottky Diode COMCHIP www.comchip.com.tw BAT54 Series -G Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Voltage: 3 0 Volts Current: 2 00 mA SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Mechanical data Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.008 grams (approx.) Mounting Position: Any Top View .056 (1.40) .047 (1.20) 3 BAT54-G 3 CATHODE BAT54A-G CATHODE 1 2 .006 (0.15)max. 1 1 ANODE ANODE 2 CATHODE .006 (0.15) .002 (0.05) 3 .037(0.95) .037(0.95) ANODE ANODE CATHODE 1 2 ANODE CATHODE 1 2 CATHODE 3 CATHODE 3 ANODE .020 (0.5) .020 (0.5) .103 (2.6) .086 (2.2) BAT54C-G www.DataSheet4U.com BAT54S-G Dimensions in inches (millimeters) Maximum Ratings (TA = 125°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Forward Current (DC) Junction Temperature Storage Temperature Range Symbol VR PF IF TJ Tstg Value 30 225 1.8 200 Max 125 Max -55 to +150 Units Volts mW mW/°C mA °C °C Electrical Characterics (TA = 25°C unless otherwise noted) (EACH DIODE) Parameter Symbol Min V(BR)R Reverse Breakdown Voltage (IR = 10 mA) 30 CT Total Capacitance (VR = 1.0 V, f = 1.0 MHz) — Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) (IF = 30 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) Forward Current (DC) Repetitive Peak Forward Current Typ — 7.60 0.50 0.22 0.41 0.52 — 0.29 0.35 — — — Max — 10.0 2.0 0.24 0.5 1.0 5.0 0.32 0.40 200 300 600 IR VF trr VF IF IFRM IFSM — — — — — — — Non–Repetitive Peak Forward Current (t < 1.0 s) “-G” suffix designates RoHS compliant Version Page 1 .044 (1.10) .035 (0.90) Unit Volts pF mAdc Vdc ns Vdc mAdc mAdc mAdc Surface Mount Schottky Diode COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (BAT54 Series-G) 820 Ω +10 V 2k 100 μH 0.1 μF DUT 50 Ω Οutput Pulse Generator 50 Ω Input Sampling Oscilloscope 90% VR Input Signal IR IR(REC) = 1 mA Output Pulse (IF = IR = 10 mA; measured at IR(REC) = 1 mA) IF 0.1 μF tr 10% tp t IF trr t Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 100 10 1 50°C IR , Reverse Current (μA) IF, Forward Current (mA) TA = 150°C TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 TA = 25°C 1 25°C 1.0 85°C 25°C – 40°C – 55°C 0.4 0.5 0.6 0.1 0.0 0.001 0.1 0.2 0.3 0 5 V F, Forward Voltage (V) 10 15 20 VR, Reverse Voltage (V) 25 30 Figure 2. Forward Voltage Figure 3. Leakage Current 14 12 C T , Total Capacitance (pF) 10 8 6 4 2 0 0 5 10 15 20 25 30 VR, Reverse Voltage (V) Figure 4. Total Capacitance “-G” suffix designates RoHS compliant Version .


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