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MGF0916A Dataheets PDF



Part Number MGF0916A
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description L & S BAND GaAs FET
Datasheet MGF0916A DatasheetMGF0916A Datasheet (PDF)

MITSUBISHI SEMICONDUCTOR MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm • High power gain Gp=19dB(TYP.) @f=1.9GHz • High power added efficiency ηadd=30%(TYP.) @f=1.9GHz,Pin=5dBm • Hermetic Package APPLICATION • For UHF Band power amplifiers Fig.1 QUALITY • GG RECOMMENDED BIAS CONDITIONS • Vds=6V • Ids=100mA .

  MGF0916A   MGF0916A


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