L & S BAND GaAs FET
MITSUBISHI SEMICONDUCTOR
MGF0915A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0915A GaAs FET...
Description
MITSUBISHI SEMICONDUCTOR
MGF0915A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm High power gain Gp=14.5 dB(TYP.) @f=1.9GHz High power added efficiency ηadd=50 %(TYP.) @f=1.9GHz,Pin=23dBm Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
Fig.1
Ids=800 mA Rg=100Ω
RECOMMENDED BIAS CONDITIONS
Vds=10V
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
(Ta=25°C)
Absolute maximum ratings
www.DataSheet4U.com
Symbol
VGSO
Parameter
Gate to sourcebreakdown voltage
Ratings
-15 -15 3000 -10 21 18.7 175 -65 to +175
Unit
V V mA mA mA W °C °C
VGDO Gate to drain breakdown voltage ID IGR IGF PT Tch Tstg
Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Electrical characteristics
Symbol
IDSS VGS(off) gm Po ηadd GLP Rth(ch-c)
(Ta=25°C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=10mA VDS=3V,ID=800mA VDS=10V,ID=800mA,f=1.9GHz Pin=23dBm VDS=10V,ID=800mA,f=1.9GHz ∆Vf Method -1 35.0 13.0 -
Limits
Typ. 2400 -3 1000 36.5 50 14.5 5 Max. 3000 -5 8
Unit
mA V mS dBm % dB °C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change....
Similar Datasheet
