MITSUBISHI SEMICONDUCTOR
MGF0913A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power Po=31dBm(TYP. ) @f=1. 9GHz,Pin=18dBm • High power gain Gp=13dB(TYP. ) @f=1. 9GHz • High power added efficiency ηadd=48%(TYP. ) @f=1. 9GHz,Pin=18dBm • Hermetic Package
APPLICATION
• For UHF Band power amplifiers
Fig. 1
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=200mA • Rg=500Ω
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
(Ta=25°C)
Absolute maximum ratings
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Symbol
VGSO VGDO ID IGR IGF PT Tch Tstg
Parameter
Gate to sourcebreakdown voltage...
MGF0913A PDF File
