MRF5S19090LR3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19090L/D MRF5S19090LR3 and MRF5S19090LSR3 replaced by MRF5S19090HR3 and MRF5S19090HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line MRF5S19090LR3 RF Power Field Effect Transistors MRF5S19090LSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 18 Watts Avg. Power Gain — 14.5 dB Efficiency — 25.8% ACPR — - 51 dB IM3 — - 37 dBc Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 90 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters Qualified Up to a Maximum of 32 VDD Operation Low Gold Plating Thic...