MG150J1ZS50

MG150J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1ZS50 High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) l Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 150A) Unit: mm Equivalent Circuit JEDEC JEITA TOSHIBA ― ― 2-95A3A www.DataSheet4U.com Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Reverse voltage Collector current DC 1ms DC 1ms Symbol VCES VGES VR IC ICP IF IFM PC Tj Tstg VIsol ― Rating 600 ±20 600 150 300 150 300 780 150 −40 ~ 125 2500 (AC 1 min.) 3/3 Unit V V V A Forward current A W °C °C V N·m Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) 1 2001-08-16 MG150J1ZS50 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturationvoltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Reverse current Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff IR VF trr Rth (j-c) VR = 600V IF = 150A, VGE = 0 IF = 150A, VGE = −10V di / dt = 200A / µs Transisto...