STW9N150

STW9N150 N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH™ Power MOSFET TARGET SPECIFICATION General features Type STW9N150 ■ ■ ■ ■ ■ ■ VDSS 1500V RDS(on) < 2.7Ω ID 8A Pw 350W 100% avalanche tested Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching Very low on-resistance TO-247 Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Internal schematic diagram www.DataSheet4U.com Applications ■ Switching application Order code Part number STW9N150 Marking W9N150V Package TO-247 Packaging Tube May 2007 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. Electrical ratings STW9N150 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Value 1500 ± 30 8 5 32 350 0.37 -55 to 150 Unit V V A A A W W/°C °C PTOT Tj Tstg Operating junction temperature Storage temperature 1. Pulse...