SS8050LT1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT¡ª 23 SS8050LT1 FEATURES TRANSISTOR£¨NPN £© 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ Unit : mm ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage www.DataSheet4U.com unless Test otherwise specified£© MIN 40 25 5 0.1 0.1 0.1 120 40 0.5 1.2 100 V V MHz 350 TYP MAX UNIT V V V ¦Ì A ¦Ì A ¦Ì A Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) conditions Ic= 100¦Ì A£¬ IE=0 Ic= 0.1mA£¬IB=0 IE=100¦Ì A£¬IC=0 VCB=40 V , IE=0 VCB=20V , IE=0 VEB= 5V , IC=0 Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current VCE=1V, IC= 100m A VCE=1V, IC= 800mA IC=800 mA, IB= 80m A IC=800 mA, IB= 80m A VCE=10V, I C= 50mA DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT f=30MHz CLASSIFICATION OF hFE(1) Rank Range DEVICE MARKING: 8050LT1=Y1 L 120- 200 H 200- 350 SOT-23 PACKAGE OUTLINE DIMENSIONS D b ¦È 0.2 E1 E L1 e e1 C A1 A2 Symbol A A1 A2 b c D E E1 e e1 L L1 ¦È 0.300 0° 1.800 0.550REF 0.500 8° 0.012 0° Dimensions In Millimeters Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 0.950TPY 2.000 0.071 0...