A20M18LVR

APT20M18B2VR A20M18LVR 200V 100A 0.018Ω POWER MOS V ® MOSFET B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. T-MAX™ TO-264 LVR TO-264 MAX Package Faster Switching Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM www.DataSheet4U.com Avalanche Energy Rated D G S All Ratings: TC = 25°C unless otherwise specified. APT20M18B2VR_LVR UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current Pulsed Drain Current 1 6 200 @ TC = 25°C 100 400 ±30 ±40 625 5.00 -55 to 150 300 100 50 3000 VGS VGSM PD TJ,TSTG TL IAR EAR EAS Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 4 Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 200 0.018 25 250 ±100 2 4 (VGS = 10V, ID = 50A) Ohms µA nA Volts 5-2004 050-5910 Rev A Zero Gate Voltage Drain Current (VDS ...