Document
MJE13004/13005
MJE13004/13005
High Voltage Switch Mode Application
• High Speed Switching • Suitable for Switching Regulator and Motor Control
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : MJE13004 : MJE13005 VCEO Collector-Emitter Voltage : MJE13004 : MJE13005
www.DataSheet4U.com
Value 600 700 300 400 9 4 8 2 75 150 - 65 ~ 150
Units V V V V V A A A W °C °C
VEBO IC ICP IB PC TJ TSTG
Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO(sus) Parameter Collector-Emitter Sustaining Voltage : MJE13004 : MJE13005 Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage Test Condition IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 2A IB1 = - IB2 = 0.4A RL = 62.5Ω 4 0.8 4 0.9 65 10 8 Min. 300 400 1 60 40 0.5 0.6 1 1.2 1.6 V V V V V pF MHz µs µs µs Typ. Max. Units V V mA
IEBO hFE VCE(sat)
VBE (sat) Cob fT tON tSTG tF
*Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time
* Pulse test: PW≤300µs, Duty cycle≤2% Pulse
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE13004/13005
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
100
10
VCE = 5V
IC = 4 IB
hFE, DC CURRENT GAIN
1
V BE(sat)
10
0.1
VCE(sat)
1 0.01
0.1
1
10
0.01 0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
1000
10
V CC=125V IC=5IB Ib1= - IB2
Cob[pF], CAPACITANCE
tR, tD [µ s], TURN ON TIME
100
1
tr
0.1
10
tD, VBE(off)=5V
1 0.1
1
10
100
1000
0.01 0.01
0.1
1
10
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
10
10
tSTG, tF [µs], TURN OFF TIME
tSTG
VCC=125V IC=5IB
IC[A], COLLECTOR CURRENT
50
DC
1
0µ
s 5m
s
s 1m
1
0.1
tF
MJE13004
1 10 100
0.1 0.01
0.01 0.1 1 10
MJE13005
1000
IC[A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE13004/13005
Typical Characteristics (Continued)
100 90
PC[W], POWER DISSIPATION
80 70 60 50 40 30 20 10 0 0 25 50
o
75
100
125
150
175
Tc[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE13004/13005
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 –0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 –0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST®
DISCLAIMER
FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™
PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ LILENT SWITCHER® SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8
SyncFET™ TinyLogic™ VCX™ UHC™
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