MPSL51

MPSL51 Discrete POWER & Signal Technologies MPSL51 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics. Absolute Maximum Ratings* Symbol www.DataSheet4U.com TA = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 100 100 4.0 200 -55 to +150 Units V V V mA °C VCEO VCBO VEBO IC TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max MPSL51 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation MPSL51 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Bas...