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FDS8670 Dataheets PDF



Part Number FDS8670
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 30V N-Channel PowerTrench MOSFET
Datasheet FDS8670 DatasheetFDS8670 Datasheet (PDF)

FDS8670 30V N-Channel PowerTrench® MOSFET August 2006 FDS8670 tm 30V N-Channel PowerTrench® MOSFET General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very.

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FDS8670 30V N-Channel PowerTrench® MOSFET August 2006 FDS8670 tm 30V N-Channel PowerTrench® MOSFET General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low Rds(on) has been maintained to provide an extremely versatile device. Features • • • • • 21 A, 30 V Max RDS(ON) = 3.7 mΩ @ VGS = 10 V Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) and gate charge Minimal Qgd (5.5 nC typical) 100% RG tested (0.9 Ω typical) RoHS Compliant Applications • High Efficiency DC-DC Converters: • Notebook Vcore Power Supply • Telecom Brick Synchronous Rectifier • Multi purpose Point Of Load www.DataSheet4U.com D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS ID PD VGSS Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units V V A W 21 105 2.5 1.2 1 –55 to +150 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W Package Marking and Ordering Information Device Marking FDS8670 Device Reel Size 13’’ FDS8670 Tape width 12mm Quantity 2500 units FDS8670 Rev C (W) ©2005 Fairchild Semiconductor Corporation FDS8670 30V N-Channel PowerTrench® MOSFET Electrical Characteristics Symbol BVDSS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 µA Min Typ Max Units 30 39 1 ±100 1 1.4 –5 3.3 4.2 4.4 118 4040 1730 160 0.2 0.9 12 11 56 68 1.5 21 20 90 108 82 42 3.7 5.0 5.5 3 V mV/°C µA nA V mV/°C mΩ Off Characteristics ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ±20 V, VDS = VGS, VGS = 0 V VDS = 0 V ID = 250 µA On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 18 A VGS=10 V, ID =21 A, TJ=125°C VDS = 10 V, ID = 21 A gFS Ciss S pF pF pF Ω ns ns ns ns nC nC nC nC 1.2 V ns A nC Dynamic Characteristics Input Capacitance Coss Crss RG td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd VSD trr IRM Qrr Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz f = 1.0 MHz V GS = 0 V, Switching Characteristics Turn–On Delay Time Turn–On R.


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