Document
FDS8670 30V N-Channel PowerTrench® MOSFET
August 2006
FDS8670
tm
30V N-Channel PowerTrench® MOSFET
General Description
This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low Rds(on) has been maintained to provide an extremely versatile device.
Features
• • • • • 21 A, 30 V Max RDS(ON) = 3.7 mΩ @ VGS = 10 V Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) and gate charge Minimal Qgd (5.5 nC typical) 100% RG tested (0.9 Ω typical) RoHS Compliant
Applications
• High Efficiency DC-DC Converters: • Notebook Vcore Power Supply • Telecom Brick Synchronous Rectifier • Multi purpose Point Of Load
www.DataSheet4U.com
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5 6
4 3 2 1
SO-8
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7 8
Absolute Maximum Ratings
Symbol
VDSS ID PD VGSS Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W
21 105 2.5 1.2 1 –55 to +150
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W
Package Marking and Ordering Information
Device Marking FDS8670 Device Reel Size 13’’ FDS8670
Tape width 12mm
Quantity 2500 units
FDS8670 Rev C (W)
©2005 Fairchild Semiconductor Corporation
FDS8670 30V N-Channel PowerTrench® MOSFET
Electrical Characteristics
Symbol
BVDSS
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA
Min Typ Max Units
30 39 1 ±100 1 1.4 –5 3.3 4.2 4.4 118 4040 1730 160 0.2 0.9 12 11 56 68 1.5 21 20 90 108 82 42 3.7 5.0 5.5 3 V mV/°C µA nA V mV/°C mΩ
Off Characteristics
∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on)
ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ±20 V, VDS = VGS, VGS = 0 V VDS = 0 V ID = 250 µA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance
ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 18 A VGS=10 V, ID =21 A, TJ=125°C VDS = 10 V, ID = 21 A
gFS Ciss
S pF pF pF Ω ns ns ns ns nC nC nC nC 1.2 V ns A nC
Dynamic Characteristics
Input Capacitance Coss Crss RG td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd VSD trr IRM Qrr Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, f = 1.0 MHz f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
Turn–On Delay Time Turn–On R.