2N6255

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50% 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: www.DataSheet4U.com The 2N6255 is a silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier, pre-driver, driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 18 36 4.0 1 Unit Vdc Vdc Vdc A Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 5.0 28.5 Watts mW/ º C Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N6255 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCES BVCEO BVEBO ICES ICBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE =0Vdc) Collector-Emitter Breakdown Voltage (IC=10 mAdc, IB=0) Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) Emitter Cutoff Current (VCB = 15 Vdc, IE = 0) Value Min. 36 18 4.0 Typ. 5.0 .25 Max. Unit Vdc Vdc ...