2N5004

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current www.DataSheet4U.com Symbol VCEO VCBO VEBO IC IC(3) PT TJ, Tstg Symbol RθJC 0 Value 80 100 5.5 5.0 10 2.0 58 -65 to +200 Max. 3.0 88 Units Vdc Vdc Vdc Adc W 0 Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1) Derate linearly 11.4 mW/ C for TA > 25 C 2) Derate linearly 331 mW/0C for TC > 250C 3) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1% 0 Unit 0 C/W 0 TO-59* RθJA C/W *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICEO ICES Min. 80 50 1.0 1.0 1.0 1.0 Max. Unit Vdc µAdc µAdc mAdc mAdc mAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc, Collector-Emitter Cutoff Current VCE = 40 Vdc, IB = 0 Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 Emitter-Base Cutoff Current VBE = 4.0 Vdc, IC = 0 VBE = 5.5 Vdc, IC = 0 IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5002, 2N5004 JAN SERIES ELECTRICAL CHARACTERISTICS (Con’t) Characteristics Symbol Min. Max....