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2N4427

Part Number	2N4427
Manufacturer	Advanced Power Technology
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Published	Jun 4, 2007
Detailed Description	2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transist...
Datasheet	2N4427 PDF File

Overview

2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA Power Gain, GPE = 10dB (Min) @ 175 MHz TO-39 1.
Emitter 2.
Base 3.
Collector com DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment.
Applications include amplifier; pre-driver, driver, and output stages.
Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 2.
0 400 Unit Vdc ...

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