2N3749

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/315 Devices 2N2880 2N3749 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = 250C (1) @ TC = 1000C (2) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC Value 80 110 8.0 0.5 5.0 2.0 30 -65 to +200 Max. 3.33 Units Vdc Vdc Vdc Adc Adc W 0 www.DataSheet4U.com C TO-59* THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 11.4 mW/0C for TA > 250C 2) Derate linearly 300 mW/0C for TC > 1000C *See Appendix A for Package Outline 0 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICBO ICEX IEBO Min. 80 110 8.0 20 0.2 1.0 0.2 Max. Unit Vdc Vdc Vdc µAdc µAdc µAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Breakdown Voltage IC = 10 µAdc Emitter-Base Breakdown to Voltage IE = 10 µAdc Collector-Emitter Cutoff Current VCE = 60 Vdc Collector-Base Cutoff Current VCB = 80 Vdc Collector-Emitter Cutoff Current VCE = 110 Vdc, VBE = -0.5 Emitter-Base Cutoff Current VEB = 6.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978)620-2600 / Fax: (978) 689-0803 111604 Page 1 of 2 2N2880, 2N3749 JAN SERIES ELECTRICAL CHARACTERISTICS (Con’t) Characteristics Sym...