2N2857

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-72 packaged UHF Transistor 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: www.DataSheet4U.com The 2N2857 is a silicon NPN transistor, designed for UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) Symbol Parameter Value Unit VCEO VCBO VEBO PD IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Maximum Device Dissipation Collector Current 15 30 2.5 200 40 V V V mW mA Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.88 º C/mW Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N2857 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol BVCEO BVCBO BVEBO ICBO HFE Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC=1.0 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCE = 15 V, IE = 0 V) DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 V) 15 30 2.5 30 Value Typ. Max. .01 150 Unit V V V µA DYNAMIC Symbol fT NF Test C...