2N2432

TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/313 Devices 2N2432 2N2432A Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VECO IC @ TA = +250C (1) @ TC = +250C (2) PT Tstg TJ Symbol RθJC 2N2432 30 30 15 2N2432A 45 45 18 Unit Vdc Vdc Vdc mAdc mW mW 0 C 0 C Unit mW/ 0C www.DataSheet4U.com Operating & Storage Junction Temp. Range 100 300 600 -65 to +200 -65 to +175 Max. 0.25 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 mW/0C above TA > +250C 2) Derate linearly 4.0 mW/0C above TC > +250C TO- 18* (TO-206AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Emitter-Collector Breakdown Voltage IE = 100 µAdc, IB = 0 IE = 10 mAdc, IB = 0 Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Emitter Cutoff Current VCB = 25 Vdc VCB = 40 Vdc 2N2432 2N2432A Both 2N2432 2N2432A 2N2432 2N2432A V(BR)ECO 15 18 10 30 45 10 10 Vdc V(BR)CEO Vdc ICES ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N2432, 2N2432A JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS (con’t) Collector-Emitter Cutoff Current VCB = 30 Vdc VCB = 25 Vdc...