FCPF11N60F

FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET FCPF11N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 11 A, 380 mΩ November 2013 Features 600 V @ TJ = 150°C Typ. RDS(on) = 320 mΩ Fast Recovery Type (trr = 120 ns) Ultra Low Gate Charge (Typ. Qg = 40 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) 100% Avalanche Tested RoHS compliant Applications LCD/LED/PDP TV Lighting Solar Inverter AC-DC Power Supply Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. D GDS G TO-220F MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Dio...