FCP11N60F

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features 650V @TJ = 150°C Typ. RDS(on) = 0.32Ω Fast Recovery Type ( trr = 120ns) Ultra Low Gate Charge (typ. Qg = 40nC) Low Effective Output Capacitance (typ. Cosseff.=95pF) 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D ! " G! G DS www.DataSheet4U.com ! " " " TO-220 GD S TO-220F ! S Absolute Maximum Ratings Symbol ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FCP11N60F 11 7 33 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) FCPF11N60F 11 * 7* 33 * Units A A A V Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5...