XS1000

7.0-13.0 GHz GaAs MMIC 6-Bit Phase Shifter October 2006 - Rev 17-Oct-06 S1000 Chip Device Layout Features 6 Bit Phase Shifter Digital Control (0 – 3.3 V) LSB = 5.625 ° 25 dBm P1dB Input Compression 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s 7.0 – 13.0 GHz phase shifter is digitally controlled with 6-Bit operation and a LSB of 5.625°. The device uses a single supply voltage of -7.5V and digital control voltage of 0 – 3.3V. This MMIC uses Mimix Broadband’s 0.5um GaAs PHEMT device technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. The device is well suited for radar applications. Absolute Maximum Ratings Supply Voltage (Vss) Supply Current (Iss) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) -10.0 VDC 10.0 mA 30.0 dBm -65 to +165 OC -55 to MTTF Table 3 MTTF Table 3 (3) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Insertion Loss @ 10 GHz (S21), Reference Level Input Return Loss (S11), All States Output Return Loss (S22), All Stat...