GaAs MMIC Power Amplifier
28.0-31.0 GHz GaAs MMIC Power Amplifier
March 2007 - Rev 05-Mar-07
P1025-BD Chip Device Layout
Features
Ka-Band 1 W Po...
Description
28.0-31.0 GHz GaAs MMIC Power Amplifier
March 2007 - Rev 05-Mar-07
P1025-BD Chip Device Layout
Features
Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
XP1025-BD
General Description
Mimix Broadband's three stage 28.0-31.0 GHz GaAs MMIC power amplifier has a small signal gain of 27.0 dB with +30.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. www.DataSheet4U.com
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+6.5 VDC 112,170,450 mA +0.3 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Smal...
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