GaAs MMIC Power Amplifier
21.0-24.0 GHz GaAs MMIC Power Amplifier
May 2006 - Rev 10-May-06
Velocium Products
18 - 20 GHz HPA - APH478
P1010 Chip...
Description
21.0-24.0 GHz GaAs MMIC Power Amplifier
May 2006 - Rev 10-May-06
Velocium Products
18 - 20 GHz HPA - APH478
P1010 Chip Device Layout
Features
Excellent Linear Output Amplifier Stage 19.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +39.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy www.DataSheet4U.comor eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
General Description
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id1,2) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+5.5 VDC 600,670 mA +0.3 VDC +15 dBm -65 to +165 OC -55 to MTTF TAble3 MTTF Table 3
(3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Param...
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