XM1001

12.0-40.0 GHz GaAs MMIC Image Reject Mixer November 2005 - Rev 21-Nov-05 M1001 Chip Device Layout Features Fundamental Image Reject Mixer 8.0 dB Conversion Loss 20.0 dB Image Rejection +25.0 dBm Input Third Order Intercept (IIP3) 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s 12.0-40.0 GHz GaAs MMIC fundamental image reject mixer can be used as an up- or down-converter. The device has a conversion loss of 8.0 dB with a 20.0 dB image rejection across the band. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect www.DataSheet4U.com and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Gate Bias Voltage (Vg) Input Power (RF Pin) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) +0.3 VDC +20.0 dBm +20.0 dBm -65 to +165 OC -55 to +125 OC Electrical Characteristics (Ambient Temperature T = 25o C) Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Freq...