Power GaAs FET
CFK2162-P5
Product Specifications July 1997 (1 of 4)
Features t High Gain t +34 dBm Power Output t Proprietary Power FET...
Description
CFK2162-P5
Product Specifications July 1997 (1 of 4)
Features t High Gain t +34 dBm Power Output t Proprietary Power FET Process t >45% Linear Power Added Efficiency t +29 dBm with 30 dBc Third Order Products t Surface Mount SO-8 Power Package Applications t ISM Band Base Stations and Terminals t PCS/PCN Base Stations and Terminals t Wireless Local Loop Description
The CFK2162-P5 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent
2.3 to 2.5 GHz +34 dBm Power GaAs FET
Package Diagram
G GND GND G 1 2 3 4
Back Plane is Source
8 7 6 5 D GND GND D
linearity at 2 Watts. Manufactured in Celeritek’s proprietary power FET process, this device is assembled in an industry standard surface mount SO-8 power package that is compatible with high volume, automated board assembly techniques.
Specifications (TA = 25°C) The following specifications are guaranteed at room temperature in Celeritek test fixture at 2.5 GHz.
Parameters
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Absolute Maximum Ratings
Parameter Symbol Rating
Conditions
Min
Typ
Max
Units
Vd = 8V, Id = 800 mA (Quiescent) P-1dB SSG 3rd Order Products (1) Efficiency @ P1dB Vd = 5V, Id = 350 mA (Quiescent) P-1dB SSG Vd = 5V, Id = 1200 mA (Quiescent) P-1dB SSG
33.0 34.0 11.0 12.0 26 — — — 30 40 30.0 9.0
— — — — — —
dBm dB dBc % dBm dB
Drain-Source Voltage Gate-Source Voltage Dra...
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