2A8

2A8 0.5 Watts, 20 Volts, Class A Linear to 2000 MHz GENERAL DESCRIPTION The 2A8 is a COMMON EMITTER transistor capable of providing 0.5 Watts of Class A, RF output power at 2000 MHz. This transistor is specifically designed for general Class A amplifier applicatons. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55EU, STYLE 2 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 5.3 Watts 50 Volts 3.5 Volts 300 mA - 65 to + 150 oC + 150 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg ηc VSWR1 CHARACTERISTICS Power Out @ 1db Comp. Pt. Power Input Power Gain Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 2.0 GHz Vcc = 20 Volts Ic = 150mA MIN 0.5 0.1 7.0 9.0 20 30:1 TYP MAX UNITS Watts Watts dB % BVebo BVces BVceo Hfe Cob θjc Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown DC Current Gain Capacitance Thermal Resistance Ie = 1 mA Ic = 10mA Ic = 10 mA Vce = 5 V, Ic = 100 mA Vcb = 28V, f = 1 MHz 3.5 50 21 20 3.0 28 4.0 33 Volts Volts Volts pF C/W o Issue September 1995 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL ...