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MBR1550CT Dataheets PDF



Part Number MBR1550CT
Manufacturers Taiwan Semiconductor Company
Logo Taiwan Semiconductor Company
Description Dual Common Cathode Schottky Rectifier
Datasheet MBR1550CT DatasheetMBR1550CT Datasheet (PDF)

MBR1535CT thru MBR15150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base.

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MBR1535CT thru MBR15150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.88 g (approximately) TO-220AB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL 1535 1545 1550 1560 1590 15100 15150 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current VRRM VRMS VDC IF(AV) CT CT CT CT CT CT CT 35 45 50 60 90 100 150 24 31 35 42 63 70 105 35 45 50 60 90 100 150 15 Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 15 UNIT V V V A A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load Peak repetitive reverse surge current (Note 1) Maximum instantaneous forward voltage (Note 2) IF=7.5A, TJ=25℃ IF=7.5A, TJ=125℃ IF=15A, TJ=25℃ IF=15A, TJ=125℃ IFSM IRRM VF 1 0.57 0.84 0.72 150 0.75 0.65 - 0.5 0.92 0.82 - A A 1.05 0.92 V - Maximum reverse current @ rated VR Voltage rate of change (Rated VR) TJ=25 ℃ TJ=125 ℃ Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle IR dV/dt RθJC RθJA TJ TSTG 0.5 10 0.3 7.5 10000 1.5 10 - 55 to +150 - 55 to +150 0.1 5.0 mA V/μs OC/W OC OC Document Number: DS_D1308062 Version: H13 MBR1535CT thru MBR15150CT Taiwan Semiconductor ORDERING INFORMATION PART NO. MBR15xxCT (Note 1) AEC-Q101 QUALIFIED Prefix "H" PACKING CODE C0 GREEN COMPOUND CODE Suffix "G" Note 1: "xx" defines voltage from 35V (MBR1535CT) to 150V (MBR15150CT) PACKAGE TO-220AB PACKING 50 / Tube EXAMPLE PREFERRED P/N PART NO. MBR1560CT C0 MBR1560CT C0G MBR1560CTHC0 MBR1560CT MBR1560CT MBR1560CT AEC-Q101 QUALIFIED H PACKING CODE C0 C0 C0 GREEN COMPOUND CODE G DESCRIPTION Green compound AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) AVERAGE FORWARD A CURRENT (A) FIG.1- FORWARD CURRENT DERATING CURVE 20 15 10 5 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 0 0 50 100 CASE TEMPERATURE (oC) 150 FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 100 PEAK FORWARD SURGE CURRENT (A) FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 300 250 8.3ms Single Half Sine Wave JEDEC Method 200 150 100 50 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 4- TYPICAL REVERSE CHARACTERISTICS PER LEG 100 INSTANTANEOUS FORWARD CURRENT (A) TJ=125℃ 10 MBR15150CT 1 TJ=25℃ Pulse Width=300μs 0.1 1% Duty Cycle MBR1535CT-MBR1545CT MBR1550CT-MBR1560CT MBR1590CT-MBR15100CT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE (V) INSTANTANEOUS REVERSE CURRENT (mA) 10 TJ=125℃ 1 0.1 0.01 0.001 0 TJ=75℃ MBR1535CT-MBR1545CT MBR1550CT-MBR15150CT TJ=25℃ 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS_D1308062 Version: H13 JUNCTION CAPACITANCE (pF) A TRANSIENT THERMAL IMPEDANCE (℃/W) 10000 FIG. 5- TYPICAL JUNCTION CAPACITANCE PER LEG f=1.0MHz Vsig=50mVp-p 1000 100 10 0.1 MBR1535CT-MBR1560CT MBR1590CT-MBR15150CT 1 10 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS 100 MBR1535CT thru MBR15150CT Taiwan Semiconductor FIG. 6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS PER LEG 100 10 1 0.1 0.01 0.1 1 10 T-PULSE DURATION. (sec) 100 DIM. A B C D E F G H I J K L M Unit (mm) Min Max - 10.50 2.62 3.44 2.80 4.20 0.68 0.94 3.54 4.00 14.60 16.00 13.19 14.79 2.41 2.67 4.42 4.76 1.14 1.40 5.84 6.86 2.20 2.80 0.35 0.64 Unit (inch) Min - 0.103 Max 0.413 0.135 0.110 0.165 0.027 0.037 0.139 0.157 0.575 0.630 0.519 0.582 0.095 0.105 0.174 0.187 0.045 0.055 0.230 0.270 0.087 0.110 0.014 0.025 MARKING DIAGRAM P/N G YWW F = Marking Code = Green Compound = Date Code = Factory Code Document Number: DS_D1308062 Version: H13 CREAT BY ART MBR1535CT thru MBR15150CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of s.


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