MAATGM0001

Attenuator dc – 6.0 GHz Features ♦ ♦ ♦ ♦ ♦ Rev A Preliminary Information MAATGM0001 6 Bit Attenuator Range 35dB Coverage, LSB = 0.56dB TTL Control Inputs MSAG™ Process 5mm, 28 Lead, PQFN Package Description The MAATGM0001 is a 6-bit Attenuator with Parallel Input Control. This product is fully matched to 50 ohms on both the input and output. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. TG0001 Primary Applications ♦ Satellite Communication ♦ Phased Array Radar Maximum Ratings1 Parameter Input Power Source Supply Voltage Junction Temperature Storage Temperature Symbol PIN VEE TJ TSTG Absolute Maximum 36 -6 170 -55 to +150 Units dBm V °C °C 1. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions2 Characteristic Control Voltage Logic High Logic Low Junction Temperature Digital Supply Voltage TJ VEE -5.2 -5 Sy...