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1N3600UR Dataheets PDF



Part Number 1N3600UR
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description SWITCHING DIODE
Datasheet 1N3600UR Datasheet1N3600UR Datasheet (PDF)

• 1N4150UR-1 AVAILABLE IN JAN, PER MIL-PRF-19500/231 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION JANTX, AND JANTXV 1N4150UR-1 1N3600UR CDLL4150 CDLL3600 MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = + 25°C Derating: 3.1 mA dc/°C Above TEC = + 110°C Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s) ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed. Type .

  1N3600UR   1N3600UR



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• 1N4150UR-1 AVAILABLE IN JAN, PER MIL-PRF-19500/231 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION JANTX, AND JANTXV 1N4150UR-1 1N3600UR CDLL4150 CDLL3600 MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = + 25°C Derating: 3.1 mA dc/°C Above TEC = + 110°C Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s) ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed. Type V BR IR = 10 V RWM I R1 VR = 50 V dc TA = 25°C V (pk) 50 50 µA dc 0.1 0.1 1 R2 VR = 50 V dc TA = 150°C µA dc 100 100 C VR = 0; f = 1 Mhz; ac signals = 50 m V (p-p) trr IF = IR = 10 to 100 mA dc R L = 100 ohms ns 4 4 DIM D F G G1 S MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.70 0.063 0.067 0.41 0.55 0.016 0.022 3.30 3.70 .130 .146 2.54 REF. .100 REF. 0.03 MIN. .001 MIN. µA FIGURE 1 V dc CDLL3600 CDLL4150,-1 75 75 pF 2.5 2.5 DESIGN DATA CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80; LL34) FORWARD VOLTAGE LIMITS – ALL TYPES V F1 Limits I F = 1 mA dc V F2 I F = 10 mA dc V F3 I F = 50 mA dc (Pulsed) V dc 0.780 0.860 V F4 I F = 100 mA dc (Pulsed) V dc 0.820 0.920 V F5 LEAD FINISH: Tin / Lead I F = 200 mA dc (Pulsed) V dc 0.870 1.000 V dc minimum maximum 0.540 0.620 V dc 0.680 0.740 THERMAL RESISTANCE (ROJEC): 100 °C/W maximum AT L = 0 THERMAL IMPEDANCE: (ZOJX): 70 °C/W maximum POLARITY: Cathode end is banded. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/°C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device. 6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (781) 689-0803 WEBSITE: http://www.microsemi.com 115 IN4150UR-1, IN3600UR-1, CDLL4150 and CDLL3600 1000 100 IF - Forward Current - (mA) 10 15 10 0º C 0º C 1 25º C 0.1 .3 .4 .5 .6 .7 .8 .9 1.0 VF - Forward Voltage (V) FIGURE 2 Typical Forward Current vs Forward Voltage 1.1 1.2 1.3 1000 100 150ºC 10 IR - Reverse Current - (µA) 100ºC 1 0.1 25ºC .01 -65ºC -65ºC NOTE : .001 20 40 60 80 100 120 140 Percent of Reverse Working Voltage (%) FIGURE 3 Typical Reverse Current vs Reverse Voltage All temperatures shown on graphs are junction temperatures 116 .


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