SXT2222A

NPN Silicon Switching Transistor High current gain: 0.1 mA to 500 mA q Low collector-emitter saturation voltage q SXT 2222 A Type SXT 2222 A Marking 2P Ordering Code (tape and reel) Q68000-A8330 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings www.DataSheet4U.com Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 120 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 40 75 6 600 1 150 – 65 … + 150 Unit V mA W ˚C Rth JA Rth JS ≤ ≤ 90 30 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SXT 2222 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 125 ˚C Collector cutoff current VCE = 30 V, VBE = 0.5 V Emitter-base cutoff current VEB = 3 V, IC = 0 Base cutoff current VCE = 30 V, VBE = – 3 V DC current gain IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 10 mA, VCE = 10 V, TA = – 55 ˚C IC = 150 mA, VCE = 10 V IC = 150 mA, VCE = 1 V IC = 500 mA, VCE = 10 V Collector-emi...