Product Description
Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor...
Product Description
Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar
Transistor (HBT) MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.
SXA-389B SXA-389BZ
Pb
RoHS Compliant & Green Package
400-2500 MHz ¼ W Medium Power GaAs HBT Amplifier with Active Bias
Product Features
Now Available in Leed Free, RoHS Compliant, & Green Packaging Lower Rth for increased MTTF 108 hrs. at TLead = 85°C On-chip Active Bias Control, Single 5V Supply Excellent Linearity: +43 dBm typ. OIP3 at 1960 MHz High P1dB : +25 dBm typ. High Gain: +18.5 dB at 850 MHz Efficient: consumes only 575 mW
Typical OIP3, P1dB, Gain
50 45 40 35 30 25 20 15 10 5 0 850 MHz 1960 MHz 2140 MHz
OIP3 P1dB Gain
dBm
Applications
2450 MHz
W-CDMA, PCS, Cellular Systems Multi-Carrier Applications
www.DataSheet4U.com
Symbol
Parameters: Test C onditions: Z0 = 50 Ohms, Ta = 25°C f f f f f f f f f f f f f f f f f f f f = = = = = = = = = = = = = = = = = = = = 850 MHz 1960 MHz 2140 MHz 2450 MHz 850 MHz 1960 MHz 2140 MHz 2450 MHz 850 MHz 1960 M...