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SPM6M020-060D

Part Number	SPM6M020-060D
Manufacturer	Sensitron
Description	Three-Phase MOSFET BRIDGE
Published	May 11, 2007
Detailed Description	SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4982, Rev. – SPM6M020-060D Three-Phase MOSFET BRIDGE, With Gate Drive...
Datasheet	SPM6M020-060D PDF File

Overview

SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4982, Rev.
– SPM6M020-060D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation, 600 VOLT, 20 AMP ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER MOSFET SPECIFICATIONS Drain to Source Breakdown Voltage IC = 250 µA, VGS = 0V Continuous Drain Current Pulsed Drain Current, 1mS Gate to Source Voltage com BVCSS TC = 25 OC TC = 90 C IDM VGS IGSS V GS(TH) ICSS O 600 - 20 10 40 V A A V nA V ID - - +/-20 +/- 100 Gate-Source Leakage Current , VGS = +/-20V Gate Threshold Voltage, IC=1mA Zero Gate Voltage Drain Current VCS = 600 V, VGE=0V Ti=25oC V...

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