SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4109, REV ENG-
SPM6G250-120D
Three-Phase IGBT BRIDGE, With Gate Drive...
SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 4109, REV ENG-
SPM6G250-120D
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 1200 VOLT, 250 AMP, THREE PHASE IGBT BRIDGE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V
www.DataSheet4U.com
BVCES TC = 25 OC TC = 90 C ICM VGE IGES V
GE(TH) O
1200
-
-
V
IC
-
-
250 240
A
3.0 -
-
600 +/-20 +/- 300 6.0
A V nA V
Gate Threshold Voltage, IC=2mA Zero Gate Voltage Collector Current VCE = 1200 V, VGE=0V Ti=25oC VCE = 900 V, VGE=0V Ti=125oC Collector to Emitter Saturation Voltage, IC = 200A, VGE = 15V, Maximum Thermal Resistance Brake IGBT 60A Maximum Current TC = 25 C
O
ICES
5 40 VCE(SAT) 2.5 2.8
mA mA V
RθJC
-
-
0.10 0.20
o
C/W C/W
o
Brake IGBT SPECIFICATIONS
Continuous Collector Current Pulsed Collector Current, 0.5mS TC = 25 OC TC = 90 C ICM O
IC
-
-
150 120 300
A
A
Over-Temperature Shutdown
Over-Temperature Shutdown Over-Temperature Shutdown Hysteresis Over-Temperature Output Tso Tsd 100 110 20 10 120
o
C C
o
10mV/oC
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[email protected]
SPM...