SENSITRON SEMICONDUCTOR
TECHNICAL DATA
SPM6G120-120D
Data Sheet 4100 Rev. -
Three-Phase IGBT BRIDGE, With Gate Driver...
SENSITRON SEMICONDUCTOR
TECHNICAL DATA
SPM6G120-120D
Data Sheet 4100 Rev. -
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 10mS Zero Gate Voltage Collector Current (For the module) VCE = 1200 V, VGE=0V Ti=25oC VCE = 800 V, VGE=0V Ti=125oC
www.DataSheet4U.com
BVCES TC = 25 OC TC = 80 C ICM ICES
O
1200 -
-
120 80 180
V A A
IC
2 15 TC = 25 OC TC = 125 C
O
mA mA V
Collector to Emitter Saturation Voltage, IC = 80A, VGE = 15V, IGBT Internal Turn On Gate Resistance IGBT Internal Turn Off Gate Resistance
VCE(SAT)
-
1.9 2.2 30 10 100 10
2.3
Ohm Ohm Ohm usec 20 0.27 V/usec
o
IGBT Internal Soft Shutdown Turn Off Gate Resistance Short Circuit Time, Conditions TBD DC Bus Voltage Rate of Rise With 15V Supply Removed, dv/dt Junction To Case Thermal Resistance RθJC -
-
C/W
MODULE TOTAL WEIGHT
Estimated Total Weight 13 OZ
221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 World Wide Web Site - http://www.sensitron.com E-mail Address -
[email protected]
1
SPM6G120-120D SENSITRON
TECHNICAL DATA
Data Sheet 4100 Rev. Brake IGBT SPECIFICATIONS
Continuous Collector Current (Limited by Terminals) Pulsed Collector...
