F-24
01/99
NJ42 Process
Silicon Junction Field-Effect Transistor
¥ General Purpose Amplifier ¥ High Breakdown Voltage
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
S D S
Die Size = 0.032" X 0.032" All Bond Pads = 0.004", Dia. Substrate is also Gate.
Devices...
