NJ32

F-18 01/99 NJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.018" X 0.018" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ32 Process. Datasheet 2N3821, 2N3822 2N3823, 2N3824 2N4222, 2N4222A www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss e ¯N 4 6 1.3 7 7.0 3 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 1 – 0.5 Min – 25 Typ – 50 – 10 – 100 22 –6 Max Unit V pA mA V NJ32 Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = 10V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-19 NJ32 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.2 V Gfs as a Function of VGS(OFF) 6 Transconductance in mS 10 VGS = Ø V Drain Current in mA 8 VGS = – 0.5 V 6 VGS = –1.0 V 4 VGS = –1.5 V...