F-14
01/99
NJ30 Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ra...
F-14
01/99
NJ30 Process
Silicon Junction Field-Effect
Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate.
This process available for customer-specified applications.
www.DataSheet4U.com
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss e ¯N 6 4.3 1 4 5 1.5 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 –1 Min – 30 Typ – 40 – 10 – 100 22 –5 Max Unit V pA mA V
NJ30 Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 20V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA
VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV
f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
nV/√HZ VDS = 10V, ID = 5 mA
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
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