F-32
01/99
NJ132 Process
Silicon Junction Field-Effect Transistor
¥ High Speed Switch ¥ Low-Noise Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.022" X 0.022" All Bond Pads = 0.004" Sq. Substrate is also Gate.
Devices in th...
