BTD1857AJ3

CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AJ3 BVCEO IC Spec. No. : C855J3 Issued Date : 2004.10.04 Revised Date :2017.06.16 Page No. : 1/6 160V 1.5A Description High BVCEO High current capability Complementary to BTB1236AJ3 Pb-free lead plating and halogen-free package Symbol BTD1857AJ3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTD1857AJ3-X-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3:2500 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name BTD1857AJ3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 180 160 5 1.5 3 1 10 150 -55~+150 Spec. No. : C855J3 Issued Date : 2004.10.04 Revised Date :2017.06.16 Page No. : 2/6 Unit V V V A A W W °C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 12.5 125 Unit °C/W °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *V...