BTD1857AE3

CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AE3 Spec. No. : C855E3 Issued Date : 2004.08.06 Revised Date :2013.11.13 Page No. : 1/5 Description High BVCEO High current capability Complementary to BTB1236AE3 Pb-free lead plating package Symbol BTD1857AE3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Ordering Information Device BTD1857AE3-0-UB-S Package TO-220 (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name BTD1857AE3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 180 160 6 1.5 3 2 20 150 -55~+150 Spec. No. : C855E3 Issued Date : 2004.08.06 Revised Date :2013.11.13 Page No. : 2/5 Unit V V V A A W W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. 180 160 6 120 60 - Typ. 140 27 Max. 100 100 0.5 1.2 390 - Unit V V V nA nA V V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=160V, IE=0 VEB=6V, IC=0 ...