BTD1805FP

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Spec. No. : C820FP Issued Date : 2005.03.29 Revised Date :2013.10.29 Page No. : 1/ 7 Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features Very low collector-to-emitter saturation voltage Fast switching speed High current gain characteristic Large current capability RoHS compliant package Symbol BTD1805FP Outline TO-220FP (C forming) TO-220FP (S forming) B：Base C：Collector E：Emitter BCE BCE Ordering Information Device BTD1805FP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name BTD1805FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C820FP Issued Date : 2005.03.29 Revised Date :2013.10.29 Page No. : 2/ 7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction T...