SLD-2000

Product Description Sirenza Microdevices’ SLD2000 is a robust 12 Watt, high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD2000 is typically used as a driver or output stage for power amplifier, or transmitter applications. These robust power transistors are fabricated using Sirenza’s high performance XEMOS IITM process. SLD-2000 12 Watt Discrete LDMOS FET -Bare Die Functional Schematic Diagram ESD Protection Product Features 12 Watt Output P1dB Single Polarity Operation 19dB Gain at 900 MHz XeMOS IITM LDMOS Integrated ESD Protection, Class 1B Aluminum Topside Metallization Gold Backside Metallization Gate Manifold Drain Manifold Source - Backside Contact RF Specifications Symbol Frequency Gain Efficiency Linearity Linearity RTH Parameter Frequency of Operation 10 Watt CW, 902 - 928MHz Drain Efficiency at 10 Watt CW, 915MHz 3rd Order IMD at 10 Watt PEP (Two Tone), 915MHz 1dB Compression (P1dB) Applications Base Station PA Driver Repeaters Military Communications RFID GSM, CDMA, Edge, WDCDMA Unit MHz dB % dBc W ºC/W Min 10 Typ 19 47 -32 12 4 Max 2700 - Thermal Resistance (Junction-to-Case, mounted in package) Test Conditions: Mounted in ceramic package and tested in Sirenza T Evaluation Board VDS = 28.0V, IDQ = 150mA, TMounting Surface = 25ºC DC Specifications Symbol gm VGS Threshold VDS Breakdown Ciss Crss Coss RDSON Pa...