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SGA-5286 Dataheets PDF



Part Number SGA-5286
Manufacturers Sirenza Microdevices
Logo Sirenza Microdevices
Description Cascadable SiGe HBT MMIC Amplifier
Datasheet SGA-5286 DatasheetSGA-5286 Datasheet (PDF)

SGA-5286 Product Description The SGA-5286 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Th.

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SGA-5286 Product Description The SGA-5286 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. SGA-5286Z Pb RoHS Compliant & Green Package DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier Product Features •Now available in Lead Free, RoHS Compliant, & Green Packaging • High Gain : 12.0 dB at 1950 MHz • Cascadable 50 Ohm • Operates From Single Supply • Low Thermal Resistance Package Gain & Return Loss vs. Frequency VD= 3.5 V, ID= 60 mA (Typ.) 20 15 Gain (dB) IRL 0 -10 -20 Return Loss (dB) GAIN Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite 10 5 ORL TL=+25ºC -30 -40 0 1 2 3 Frequency (GHz) 4 5 0 Symbol G Parameter Small Signal Gain Units dB dB dB dBm dBm dBm dBm MHz dB dB dB V mA °C/W Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz Min. 12.2 Typ. 13.5 12.0 11.5 17.0 14.0 31.0 27.2 5000 Max. 14.9 P1dB OIP3 Output Pow er at 1dB Compression Output Third Order Intercept Point Bandw idth Determined by Return Loss (>10dB) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead) VS = 8 V RBIAS = 75 Ohms 1950 MHz 1950 MHz 1950 MHz 3.1 54 19.5 24.4 4.9 3.5 60 97 3.9 66 Test Conditions: ID = 60 mA Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-100610 Rev. C SGA-5286 DC-5000 MHz Cascadable MMIC Amplifier Preliminary Typical RF Performance at Key Operating Frequencies Symbol Parameter Unit 100 Frequency (MHz) Frequency Frequency (MHz)(MHz) 500 850 1950 2400 3500 G OIP3 P1dB IRL ORL S12 NF Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure VS =8V V S= 8 V RBIAS = 75 Ohms R BIAS= 39 Ohms dB dBm dBm dB dB dB dB 13.7 13.6 31.6 16.5 13.5 31.0 17.0 17.1 35.3 18.4 4.1 12.0 27.2 14.0 19.5 24.4 19.2 4.9 11.5 25.4 12.7 19.4 23.8 19.5 5.0 10.5 24.2 28.2 17.7 20.4 34.5 18.0 4.1 16.7 26.2 19.5 Test Conditions: = 60 mA Typ. IID D = 80 mA Typ. TLL = =25ºC 25ºC T OIP33 Tone Tone Spacing Spacing = =1 1 MHz, MHz, Pout Pout per per tone tone = =0 -5 dBm OIP dBm ZS = Z = 50 Ohms Z S= ZLL= 50 Ohms Noise Figure vs. Frequency VD= 3.5 V, ID= 60 mA (Typ.) 7 6 5 4 3 2 0 0.5 1 1.5 2 Frequency (GHz) Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Absolute Limit 120 mA 5V +16 dBm +150°C -40°C to +85°C +150°C Noise Figure (dB) Max. Storage Temp. TL=+25ºC 2.5 3 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency VD= 3.5 V, ID= 60 mA (Typ.) 35 30 OIP3 (dBm) P1dB (dBm) 18 16 14 12 10 P1dB vs. Frequency VD= 3.5 V, ID= 60 mA (Typ.) 25 20 TL=+25ºC 15 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 TL=+25ºC 8 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-100610 Rev. C SGA-5286 DC-5000 MHz Cascadable MMIC Amplifier Preliminary |S | vs. Frequency 21 |S | vs. Frequency 11 20 15 S21(dB) 10 5 VD= 3.5 V, ID= 60 mA (Typ.) 0 VD= 3.5 V, ID= 60 mA (Typ.) -10 S11(dB.


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