Product Description
Sirenza Microdevices’ SBF-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor ...
Product Description
Sirenza Microdevices’ SBF-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar
Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
G ain & R etu rn L o ss V s F req u en cy + 25c
25 22 .5 20 17 .5 15 12 .5 10 7 .5 5 0 10 0 20 0 3 00 4 00 50 0 60 0 7 00 80 0 90 0
S2 1 S1 1 S2 2
SBF-5089 SBF-5089Z
Pb
RoHS Compliant & Green Package
DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
Product Features
Available in Lead Free, RoHS compliant,
& Green packaging IP3 = 41dBm @ 240MHz Stable Gain Over Temperature Robust 1000V ESD, Class 1C Operates From Single Supply Low Thermal Resistance
0 -5 -10 -15 -20 -25 -30 -35 -40
IRL, ORL (dB)
Gain(dB)
Applications
Receiver IF Applications Cellular,...