CED6060R/CEU6060R
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 30A, RDS(ON) = 25mΩ @VGS = 10V. Supe...
CED6060R/CEU6060R
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
60V, 30A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 30 IDM 120
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
50 0.34
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
EAS IAS TJ,Tstg
200 30 -55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 3 50
Units V V A A W
W/ C mJ A C
Units C/W C/W
Specification and data are subject to change ...