P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -28A, RDS(ON) = 32mΩ RDS(ON) = 50mΩ @VGS = -10V. @VGS ...
P-Channel Enhancement Mode Field Effect
Transistor FEATURES
-30V, -28A, RDS(ON) = 32mΩ RDS(ON) = 50mΩ @VGS = -10V. @VGS = -4.5V.
CED3301/CEU3301
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30
Units V V A A W W/ C C
±20
-28 -100 42 0.33 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3 50 Units C/W C/W
Details are subject to change without notice . 1
Rev 2. 2007.Jan http://www.cetsemi.com
CED3301/CEU3301
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gat...