CEFF634

CEFF634 Nov. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 250V , 6A , RDS(ON)=450mΩ @VGS=10V. D 6 Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole G G D S S TO-220F ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID -Pulsed IDM Drain-Source Diode Forward Current IS Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range PD TJ, TSTG Limit 250 30 6 24 6 38 0.3 -50 to 150 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case R JC 3.3 C/W Thermal Resistance, Junction-to-Ambient R JA 65 C/W 6-102 CEFF634 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICSa Gate Threshold Voltage Symbol Condition Min Typ Max Unit BVDSS VGS = 0V, ID = 250µA 250 IDSS VDS = 250V, VGS = 0V IGSS VGS = 30V, VDS = 0V V 25 µA 6 100 nA VGS(th) VDS = VGS, ID = 250µA 2 4V Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 5.1A 450 mΩ On-State Drain Current ID(ON) Forward Transconductance gFS DYNAMIC CHARACTERISTICSb Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICSb Tur...