CEP740A/CEB740A CEI740A/CEF740A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP740A CEB740A CEI740A...
CEP740A/CEB740A CEI740A/CEF740A
N-Channel Enhancement Mode Field Effect
Transistor FEATURES
Type CEP740A CEB740A CEI740A CEF740A VDSS 400V 400V 400V 400V RDS(ON) 650mΩ 650mΩ 650mΩ 650mΩ ID 10A 10A 10A 10A e @VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G
D
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEI SERIES TO-262(I2-PAK)
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAS TJ,Tstg
f
TO-220F
Units V V
400
±30
10 40 125 1 400 10 -55 to 150 10 40 43 0.34 400 10
e e
A A W W/ C mJ A C
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 1.0 62.5 Limit 2.9 65 Units C/W C/W
2003.October 4 - 158
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CEP740A/CEB740A CEI740A/CEF740A
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics ...