CEP658N/CEB658N CEF658N
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP658N CEB658N CEF685N VDSS 180V 180V 180V RDS(ON) 0.22Ω 0.22Ω 0.22Ω ID 16A 16A 16A
d
PRELIMINARY
@VGS 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
G
S CEB SERIES ...
